JPH0512280Y2 - - Google Patents

Info

Publication number
JPH0512280Y2
JPH0512280Y2 JP1987115783U JP11578387U JPH0512280Y2 JP H0512280 Y2 JPH0512280 Y2 JP H0512280Y2 JP 1987115783 U JP1987115783 U JP 1987115783U JP 11578387 U JP11578387 U JP 11578387U JP H0512280 Y2 JPH0512280 Y2 JP H0512280Y2
Authority
JP
Japan
Prior art keywords
gas
nozzle
reaction chamber
sih
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1987115783U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6437464U (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987115783U priority Critical patent/JPH0512280Y2/ja
Publication of JPS6437464U publication Critical patent/JPS6437464U/ja
Application granted granted Critical
Publication of JPH0512280Y2 publication Critical patent/JPH0512280Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP1987115783U 1987-07-27 1987-07-27 Expired - Lifetime JPH0512280Y2 (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987115783U JPH0512280Y2 (en]) 1987-07-27 1987-07-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987115783U JPH0512280Y2 (en]) 1987-07-27 1987-07-27

Publications (2)

Publication Number Publication Date
JPS6437464U JPS6437464U (en]) 1989-03-07
JPH0512280Y2 true JPH0512280Y2 (en]) 1993-03-29

Family

ID=31357744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987115783U Expired - Lifetime JPH0512280Y2 (en]) 1987-07-27 1987-07-27

Country Status (1)

Country Link
JP (1) JPH0512280Y2 (en])

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945926U (ja) * 1982-09-20 1984-03-27 富士通株式会社 化学気相成長装置
JPS6082668A (ja) * 1983-10-07 1985-05-10 Hitachi Tokyo Electronics Co Ltd ガス流量制御装置
JPH0713946B2 (ja) * 1985-05-24 1995-02-15 株式会社日立製作所 Cvd装置

Also Published As

Publication number Publication date
JPS6437464U (en]) 1989-03-07

Similar Documents

Publication Publication Date Title
US5029554A (en) Semiconductor manufacturing apparatus including a temperature control mechanism
JPH04218916A (ja) 熱処理装置
CN115558905B (zh) 一种提高碳化硅沉积速率与均匀性的方法与反应器
JPH0512280Y2 (en])
JPS6033352A (ja) 減圧cvd装置
JPS63316425A (ja) 半導体装置の製造装置
USRE36328E (en) Semiconductor manufacturing apparatus including temperature control mechanism
JP4450928B2 (ja) 多孔質複合材料の製造方法
JPS626682Y2 (en])
JPS6168393A (ja) ホツトウオ−ル形エピタキシヤル成長装置
JPS607378B2 (ja) Cvd装置
JPH0593274A (ja) 縦型cvd膜生成方法及び装置
JPH0222474A (ja) セラミック材の製造方法及びその製造用反応炉
JPH07312364A (ja) 半導体製造装置及びその製造方法
JP2727106B2 (ja) 膜形成方法
JPS5921863Y2 (ja) 気相成長用反応管
JP2548679Y2 (ja) 縦型拡散装置の反応管
JPH05335250A (ja) Cvd装置
JPS6327426B2 (en])
JPH0713946B2 (ja) Cvd装置
JPH084075B2 (ja) 気相成長装置
JPS61245539A (ja) 化学気相成長装置
JPS62244123A (ja) 気相成長装置
CN119932517A (zh) 半导体外延生长的大尺寸多片mocvd装备及其使用方法
JPH01161719A (ja) 気相成長装置